Substrate LiAlO2
Sharaxaada
LiAlO2 waa substrate filim crystal ah oo heer sare ah.
Guryaha
Qaab dhismeedka crystal | M4 |
Unug unug joogto ah | a=5.17 A c=6.26 A |
dhibic dhalaalaysa (℃) | 1900kii |
Cufnaanta (g/cm3) | 2.62 |
Adag (Mho) | 7.5 |
shaandhaynta | Keli ama labanlaab ama aan lahayn |
Hanuuninta Crystal | 100 001> |
Qeexida Substrate-ka LiAlO2
Substrate-ka LiAlO2 waxa loola jeedaa substrate ka samaysan lithium aluminium oxide (LiAlO2).LiAlO2 waa iskudhis crystalline ah oo ka tirsan kooxda booska R3m waxayna leedahay qaab dhismeed crystal saddex xagal ah.
Qaybaha LiAlO2 ayaa loo adeegsaday codsiyo kala duwan, oo ay ku jiraan korriinka filimada khafiifka ah, lakabyada epitaxial, iyo qaab-dhismeedka heterostructures ee aaladaha elektiroonigga ah, optoelectronic, iyo sawir-qaadista.Sababtoo ah sifooyinka jidheed iyo kiimikaad ee aadka u fiican, waxay si gaar ah ugu habboon tahay horumarinta qalabka semiconductor ballaaran.
Mid ka mid ah codsiyada ugu muhiimsan ee substrates LiAlO2 ayaa ku yaal goobta Gallium Nitride (GaN) aaladaha ku saleysan sida High Electron Mobility Transistors (HEMTs) iyo Diodes Emitting Light (LEDs).Isku-dheeli la'aanta shafka ee u dhaxaysa LiAlO2 iyo GaN waa mid yar, taas oo ka dhigaysa substrate ku habboon koritaanka epitaxial ee filimada khafiifka ah ee GaN.Substrate-ka LiAlO2 wuxuu bixiyaa naqshad tayo sare leh oo loogu talagalay dhigista GaN, taasoo keentay in la hagaajiyo waxqabadka qalabka iyo isku halaynta.
Substrates LiAlO2 ayaa sidoo kale loo isticmaalaa meelo kale sida kobaca qalabka ferroelectric ee qalabka xusuusta, horumarinta qalabka piezoelectric, iyo abuurista baytariyada adag ee gobolka.Sifooyinkooda gaarka ah, sida kuleylka kuleylka sarreeya, xasilloonida farsamada wanaagsan, iyo joogtada ah ee dielectric hooseeya, waxay ku siinayaan faa'iidooyinka codsiyadan.
Marka la soo koobo, substrate LiAlO2 waxa loola jeedaa substrate ka samaysan lithium aluminium oxide.Substrate-ka LiAlO2 waxaa loo isticmaalaa codsiyo kala duwan, gaar ahaan kobaca aaladaha GaN-ku-saleysan, iyo horumarinta aaladaha kale ee elektiroonigga ah, optoelectronic iyo photonic.Waxay leeyihiin sifooyin jidheed iyo kiimiko oo la jecel yahay oo ka dhigaya inay ku habboon yihiin meel dhigista filimada khafiifka ah iyo qaab-dhismeedka heterostructures waxayna kor u qaadaan waxqabadka qalabka.