Ge substrate
Sharaxaada
Ge single crystal waa semiconductor heer sare ah oo loogu talagalay warshadaha Infrared iyo IC.
Guryaha
| Habka Kobaca | Habka Czochralski | ||
| Dhismaha Crystal | M3 | ||
| Cutubka Joogtada ah | a=5.65754 Å | ||
| Cufnaanta (g/cm3) | 5.323 | ||
| Meesha dhalaalaysa (℃) | 937.4 | ||
| Material Doped | Ma jiro doped | Sb-doped | In / Ga-doped |
| Nooca | / | N | P |
| iska caabin | 35Ωcm | 0.05Ωcm | 0.05 ~ 0.1Ωcm |
| EPD | 4×103∕cm2 | 4×103∕cm2 | 4×103∕cm2 |
| Cabbirka | 10x3,10x5,10x10,15x15,20x15,20x20, | ||
| dia2" x 0.33mm dia2" x 0.43mm 15 x 15 mm | |||
| Dhumucda | 0.5mm, 1.0mm | ||
| shaandhaynta | Keli ama labanlaab | ||
| Hanuuninta Crystal | <100>, <110>, <111>, ± 0.5º | ||
| Ra | ≤5Å (5µm×5µm) | ||
Qeexida Ge Substrate-ka
Substrate-ka Ge waxa loola jeedaa substrate ka samaysan germanium curiye (Ge).Germanium waa qalab semiconductor ah oo leh sifooyin elektaroonik ah oo gaar ah oo ka dhigaya mid ku habboon codsiyada elektaroonigga ah iyo aaladaha indhaha ee kala duwan.
Substrates-ka waxaa inta badan loo adeegsadaa soo saarista aaladaha elegtarooniga ah, gaar ahaan dhanka tignoolajiyada semiconductor.Waxaa loo isticmaalaa sida alaabta aasaasiga ah ee lagu xareeyo filimada khafiifka ah iyo lakabyada epitaxial ee semiconductors kale sida silicon (Si).Substrates-ka waxaa loo isticmaali karaa in lagu beero qaab-dhismeedyada heterostructures iyo lakabyada isku dhafan ee semiconductor leh sifooyin gaar ah oo loogu talagalay codsiyada sida transistors-xawaaraha sare, sawir-qaadayaasha, iyo unugyada qorraxda.
Germanium sidoo kale waxaa loo isticmaalaa sawir-qaadista iyo optoelectronics, halkaas oo loo isticmaali karo sidii substrate loogu talagalay soosaarayaasha infrared (IR) iyo muraayadaha.Substrates-ku waxay leeyihiin sifooyin looga baahan yahay codsiyada infrared-ka, sida kala-gudbinta ballaaran ee gobolka dhexe-infrared iyo sifooyin farsamo oo heerkul hooseeya.
Substrate-yadu waxay leeyihiin qaab-dhismeed silikoon oo isku dhow oo u dhigma, taasoo ka dhigaysa inay la jaanqaadi karaan la-qabsiga elektiroonigga-S-ku-saleysan.Iswaafajintani waxay u oggolaanaysaa abuurista qaab-dhismeedyada isku-dhafan iyo horumarinta aaladaha elektiroonigga ah ee horumarsan.
Marka la soo koobo, substrate-ka Ge waxa loola jeedaa substrate ka samaysan germanium, walxo semiconductor ah oo loo isticmaalo codsiyada elektarooniga ah iyo indhaha.Waxay u adeegtaa sidii madal loogu talagalay kobaca agabka kale ee semiconductor, taasoo awood u siinaysa samaynta aaladaha kala duwan ee dhinacyada elektiroonigga ah, optoelectronics iyo photonics.
