GaAs Substrate
Sharaxaada
Gallium Arsenide (GaAs) waa koox muhiim ah oo qaan-gaar ah III-Ⅴ semiconductor-ka isku-dhafka ah, waxaa si weyn loogu isticmaalaa goobta optoelectronics iyo microelectronics.GaAs inta badan waxa loo qaybiyaa laba qaybood: gaAs-dahaaran iyo nooca N-gaAs.GaAs-ka-dahaadhka-hoosaadka ah waxaa inta badan loo isticmaalaa in lagu sameeyo wareegyo isku dhafan oo leh MESFET, HEMT iyo qaab-dhismeedyada HBT, kuwaas oo loo isticmaalo radar, microwave iyo milimitirka isgaarsiinta hirarka, kombiyuutarada xawaarahooda aadka u sarreeya iyo isgaarsiinta fiber indhaha.Nooca N-GaAs waxaa inta badan lagu isticmaalaa LD, LED, u dhow lasers infrared, leysarka quantum si fiican u sarreeya iyo unugyada cadceed oo tayo sare leh.
Guryaha
| Crystal | Doped | Nooca Habdhaqanka | Isku-duubnaanta Socodyada cm-3 | Cufnaanta cm-2 | Habka Kobaca |
| GAAs | Midna | Si | / | <5×105 | LEC |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
GaAs Substrate Qeexida
Substrate-ka GaAs waxa loola jeedaa substrate ka samaysan gallium arsenide (GaAs) walxo crystal ah.GaAs waa semiconductor ka kooban gallium (Ga) iyo walxaha arsenic (As).
GaAs substrates waxaa inta badan loo isticmaalaa beeraha elektiroonigga ah iyo optoelectronics sababtoo ah sifooyinkooda wanaagsan.Qaar ka mid ah sifooyinka muhiimka ah ee GaAs substrates waxaa ka mid ah:
1. Dhaqdhaqaaqa elektaroonigga sare: GaAs waxay leedahay dhaqdhaqaaq elektaroonig ah oo ka sarreeya qalabka kale ee semiconductor-ka caadiga ah sida silicon (Si).Dabeecaddani waxay ka dhigaysa substrate GaAs oo ku habboon qalabka elektiroonigga ah ee awoodda sare leh ee soo noqnoqda.
2. Farqiga band ee tooska ah: GaAs waxay leedahay farqiga band ee tooska ah, taas oo macnaheedu yahay in qiiqa wax ku ool ah uu soo baxo uu dhici karo marka elektaroonnada iyo godadka ay dib isugu yimaadaan.Dabeecaddani waxay ka dhigaysa GaAs substrates mid ku habboon codsiyada optoelectronic sida diode-yada iftiinka (LEDs) iyo lasers.
3. Bandgap ballaaran: GaAs waxay leedahay faashad ka ballaadhan silikoon, taasoo awood u siinaysa inay ku shaqeyso heerkul sare.Gurigani wuxuu u oggolaanayaa aaladaha ku saleysan GaAs inay si hufan ugu shaqeeyaan jawi kuleyl sare leh.
4. Sawaxanka hooseeya: Substrate-yada GaAs waxay muujinayaan heerarka qaylada hoose, iyaga oo ka dhigaya kuwo ku habboon cod-weyneyaasha dhawaaqa hooseeya iyo codsiyada kale ee elektiroonigga ah ee xasaasiga ah.
GaAs substrates waxaa si weyn loogu isticmaalaa qalabka elektiroonigga ah iyo optoelectronic, oo ay ku jiraan transistor-xawaaraha sare, wareegyada isku dhafan microwave (ICs), unugyada photovoltaic, qalabka photon, iyo unugyada cadceedda.
Qaybahaan waxaa lagu diyaarin karaa iyadoo la adeegsanayo farsamooyin kala duwan sida Dhigista Uumiga Kiimikada ee Birta organic (MOCVD), Molecular Beam Epitaxy (MBE) ama Wajiga dareeraha Epitax (LPE).Habka kobaca gaarka ah ee loo isticmaalo waxay kuxirantahay codsiga la rabo iyo shuruudaha tayada ee GaAs substrate.
