Substrate-ka SiC
Sharaxaada
Silicon carbide (SiC) waa isku-dhafka laba-geesoodka ah ee Kooxda IV-IV, waa xarunta kaliya ee xasilloon ee Kooxda IV ee Jadwalka Xilliyeedka, Waa semiconductor muhiim ah.SiC waxay leedahay kuleyl aad u wanaagsan, farsamo, kiimiko iyo sifooyin koronto, taas oo ka dhigaysa mid ka mid ah agabka ugu wanaagsan ee samaynta heerkul sare, soo noqnoqoshada, iyo aaladaha elektiroonigga ah ee awoodda sare leh, SiC sidoo kale waxaa loo isticmaali karaa walxo substrate ah. ee gaN-ku-saleysan dheesha buluuga ah ee iftiiminaya.Waqtigan xaadirka ah, 4H-SiC waa wax soo saarka caadiga ah ee suuqa, iyo nooca conductivity waxaa loo qaybiyaa nooca semi-insulating iyo nooca N.
Guryaha
| Shayga | 2 inch 4H N-nooca | ||
| Dhexroorka | 2 inji (50.8mm) | ||
| Dhumucda | 350+/-25um | ||
| Hanuuninta | xagasha ka baxsan 4.0˚ dhanka <1120> ± 0.5˚ | ||
| Hanuuninta Flat Primary | <1-100> ± 5° | ||
| Dugsiga Sare Hanuuninta | 90.0˚ CW oo ka socda Flat Primary ± 5.0˚, Si Wejiga kor | ||
| Dhererka Guriga aasaasiga ah | 16 ± 2.0 | ||
| Dhererka Guriga Sare | 8 ± 2.0 | ||
| Darajo | Heerka wax soo saarka (P) | Darajada cilmi baarista (R) | Dhibicda darajada (D) |
| iska caabin | 0.015 ~ 0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Cufnaanta Dheef-yar | ≤ 1 micropipes/cm² | ≤ 1 0 micropipes/cm² | ≤ 30 micropipes/cm² |
| Qalafsanaanta dusha sare | Si waji CMP Ra <0.5nm, C Face Ra <1 nm | N/A, aagga la isticmaali karo> 75% | |
| TTV | < 8 um | <10um | < 15 um |
| Qaansada | < ± 8 um | <±10um | < ± 15um |
| Warp | < 15 um | < 20 um | < 25 um |
| dildilaaca | Midna | Dhererka isugeynta ≤ 3 mm | Dhererka isugeynta ≤10mm, |
| xoqid | ≤ 3 xagtin, isugeyn | ≤ 5 xagtin, isugeyn | ≤ 10 xagtin, isugeyn |
| Hex Plates | ugu badnaan 6 saxan, | ugu badnaan 12 saxan, | N/A, aagga la isticmaali karo> 75% |
| Aagaga Nooca Badan | Midna | Aagga isugeynta ≤ 5% | Aagga isugeynta ≤ 10% |
| faddarayn | Midna | ||
